THE EVOLUTION OF SI/SIO2 INTERFACE ROUGHNESS

被引：91

作者：

CARIM, AH

SINCLAIR, R

机构：

[1] Stanford Univ, Stanford, CA, USA, Stanford Univ, Stanford, CA, USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 03期

关键词：

D O I：

10.1149/1.2100544

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：741 / 746

页数：6

共 15 条

[1] A 2-STEP OXIDATION PROCESS TO IMPROVE THE ELECTRICAL BREAKDOWN PROPERTIES OF THIN OXIDES
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[2] SI-SIO2 INTERFACE EXAMINED BY CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY
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[3] ARE THE CORE STRUCTURES OF DISLOCATIONS AND GRAIN-BOUNDARIES RESOLVABLE BY HREM
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[J]. JOURNAL OF MICROSCOPY-OXFORD, 1983, 129 (MAR): : 337 - 345
[4] THE PREPARATION OF CROSS-SECTION SPECIMENS FOR TRANSMISSION ELECTRON-MICROSCOPY
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[J]. JOURNAL OF ELECTRON MICROSCOPY TECHNIQUE, 1984, 1 (01): : 53 - 61
[5] SI/SIO2 INTERFACE ROUGHNESS - STRUCTURAL OBSERVATIONS AND ELECTRICAL CONSEQUENCES
CARIM, AH
BHATTACHARYYA, A
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (09) : 872 - 874
[6] CLAEYS C, 1985, ELECTROCHEMICAL SOC, P329
[7] VISCOUS-FLOW OF THERMAL SIO2
EERNISSE, EP
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (06) : 290 - 293
[8] STRESS IN THERMAL SIO2 DURING GROWTH
EERNISSE, FP
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (01) : 8 - 10
[9] DRY OXIDATION OF SILICON - A NEW MODEL OF GROWTH INCLUDING RELAXATION OF STRESS BY VISCOUS-FLOW
FARGEIX, A
GHIBAUDO, G
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) : 7153 - 7158
[10] THE STRUCTURE OF ULTRATHIN OXIDE ON SILICON
KRIVANEK, OL
MAZUR, JH
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (04) : 392 - 394

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