Wide field imaging spectrometer for ESA's future X-ray mission:: XEUS

被引：4

作者：

Strüder, L ^{[1
]}

Hartmann, R ^{[1
]}

Holl, P ^{[1
]}

Kemmer, J ^{[1
]}

Klein, P ^{[1
]}

Krause, N ^{[1
]}

Lechner, P ^{[1
]}

Lutz, G ^{[1
]}

Meidinger, N ^{[1
]}

Pfeffermann, E ^{[1
]}

Popp, M ^{[1
]}

Richter, R ^{[1
]}

Soltau, H ^{[1
]}

Trümper, J ^{[1
]}

von Zanthier, C ^{[1
]}

机构：

[1] MPI, Semicond Lab, D-81739 Munich, Germany

来源：

X-RAY OPTICS, INSTRUMENTS, AND MISSIONS II | 1999年 / 3766卷

关键词：

imaging X-ray spectrometers; XEUS; XMM; high resitivity silicon; JFET electronics; active pixel sensors (APS); frame store pn-CCDs; silicon drift detectors; back illumination;

D O I：

10.1117/12.363630

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

ESA's future X-ray mission, the X-ray evolving ESA's future X-ray mission (launch: approximate to 2010), the X-ray evolving universe spectroscopy mission (XEUS) is actually under study as a potential successor of the XMM satellite (launch: 15. dec. 1999). Its collecting area for X-rays from 100 eV up to 20 keV will be about 200 times larger than compared to XMM. The angular resolution will be improved by a factor of five. The field of view will eventually be as large as 10 arcmin. Novel wide field imagers (WFI) are needed to overcome the limitations by the state-of-the-art CCD type detectors, limited due to the high number of X-rays focussed into the focal plane. To face the problem of high count rate and large formats with simultaneous good energy resolution and high quantum efficiency we have proposed two new focal plane X-ray detectors: (a) a back illuminated active pixel sensor (DEPMOS) and (b) a 2000 readout channel back illuminated frame store pn-CCD. Both will be fabricated at the MPI semiconductor lab on 500 mu m high resitivity silicon.

引用

页码：127 / 143

页数：17

共 6 条

[1] New pixel detector concepts based on junction field effect transistors on high resistivity silicon [J].