Study of a DEPJFET pixel matrix with continuous clear mechanism

被引：23

作者：

Klein, P

Cesura, G

Fischer, P

Lutz, G

Neeser, W

Richter, RH

Wermes, N

机构：

[1] UNIV BONN,INST PHYS,D-53115 BONN,GERMANY

[2] MAX PLANCK INST,HALBLEITERLABOR,MUNICH,GERMANY

[3] UNIV DORTMUND,INST EXPT PHYS 4,DORTMUND,GERMANY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1997年 / 392卷 / 1-3期

关键词：

D O I：

10.1016/S0168-9002(97)00299-4

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A new kind of silicon pixel detector with integrated amplification has been built and tested. Each pixel consists of a p-channel JFET located on a fully depleted substrate, The pixel size can be customized by using a drift-chamber-like transport mechanism in each pixel. The homogeneity of the signal response of a small matrix was investigated with a laser diode. The measured rise time and gain of the device are analyzed with a simple small signal model.

引用

收藏

页码：254 / 259

页数：6

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