1/f-noise study of undoped intrinsic hydrogenated amorphous silicon thin films

被引：15

作者：

Günes, M ^{[1
]}

Johanson, RE ^{[1
]}

Kasap, SO ^{[1
]}

机构：

[1] Univ Saskatchewan, Dept Elect Engn, Saskatoon, SK S7N 5A9, Canada

来源：

PHYSICAL REVIEW B | 1999年 / 60卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.60.1477

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Conductance fluctuations in four samples of undoped intrinsic hydrogenated amorphous silicon (a-Si:H) were measured in the temperature range of 450 K to 500 K and for frequencies from 2 Hz to 3 kHz. The noise spectra divide into two regions that each fit a 1/f(alpha) power law but with different slope parameters alpha and different temperature dependences. At low frequencies, alpha is greater than unity and increases with temperature. At high frequencies, alpha is near 0.6 and temperature independent, but the noise magnitude decreases rapidly with temperature. We infer from the different dependences on temperature that the noise is generated by two independent mechanisms operating simultaneously in a-Si:H. We also observe that the 1/f noise exhibits a quadratic dependence on bias current and Gaussian statistics. [S0163-1829(99)04327-1].

引用

页码：1477 / 1479

页数：3

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