NOISE SPECTROSCOPY IN AMORPHOUS-SILICON FILMS

被引:10
作者
ANDERSON, JC
机构
来源
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1983年 / 48卷 / 01期
关键词
D O I
10.1080/13642818308226429
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:31 / 45
页数:15
相关论文
共 14 条
[1]   CAPTURE CROSS-SECTION AND DENSITY OF DEEP GAP STATES IN A-SIHX SCHOTTKY-BARRIER STRUCTURES [J].
ABELES, B ;
WRONSKI, CR ;
GOLDSTEIN, Y ;
CODY, GD .
SOLID STATE COMMUNICATIONS, 1982, 41 (03) :251-253
[2]   RECOMBINATION MECHANISMS IN AMORPHOUS SILICON-BASED ALLOYS [J].
ADLER, D ;
SILVER, M ;
MADAN, A ;
CZUBATYJ, W .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) :6429-6431
[3]   HOLE DRIFT MOBILITY IN AMORPHOUS SILICON [J].
ALLAN, D .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 38 (04) :381-392
[4]  
ALLAN D, 1977, 7TH P INT C AM LIQ S, P323
[5]   TEMPERATURE-VARIATION OF MOBILITY GAP IN NONPOLAR AMORPHOUS-SEMICONDUCTORS [J].
GRIFFITH, RW .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1977, 24 (03) :413-426
[6]  
HOOGE FN, 1981, REP PROG PHYS, V44, P481
[7]   FLUCTUATION-DISSIPATION THEOREM [J].
KUBO, R .
REPORTS ON PROGRESS IN PHYSICS, 1966, 29 :255-+
[8]   THERMAL IONIZATION OF TRAPPED ELECTRONS [J].
KUBO, R .
PHYSICAL REVIEW, 1952, 86 (06) :929-937
[9]  
LEWIS B, 1978, NUCLEATION GROWTH TH
[10]   INVESTIGATION OF DENSITY OF LOCALIZED STATES IN A-SI USING FIELD-EFFECT TECHNIQUE [J].
MADAN, A ;
LECOMBER, PG ;
SPEAR, WE .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1976, 20 (02) :239-257