Organic thin film transistors with polymer high-k dielectric insulator

With the soluble copolymer poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) for the dielectric layer, we fabricate organic field effect transistors with enhanced gate effects, if we use P(VDF-TrFE) layers with a thickness of 2 mu m. No hysteresis is observed. We obtain a relative dielectric constant of about 11 (at 1 kHz), which enables operation voltages smaller than for the organic insulator polymethylmetacrylate (PMMA,epsilon=3.3 at 1 kHz). In contrast, for thinner films of P(VDF-TrFE) (250 mn), we find the typical ferroelectric hysteresis of the copolymer. This gives opportunities for building up organic transistors with a thin P(VDF-TrFE) ferroelectric layer as nonvolatile memory element. (c) 2005 Elsevier B.V. All rights reserved.