SCREAM MicroElectroMechanical Systems

被引：72

作者：

MacDonald, NC ^{[1
]}

机构：

[1] CORNELL UNIV, CORNELL NANOFABRICAT FACIL, ITHACA, NY 14853 USA

来源：

MICROELECTRONIC ENGINEERING | 1996年 / 32卷 / 1-4期

基金：

美国国家科学基金会;

关键词：

SCREAM; MicroElectroMechanical Systems (MEMS);

D O I：

10.1016/0167-9317(96)00007-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A process called SCREAM for Single Crystal Reactive Etching And Metallization is used to make MicroElectroMechanical Systems (MEMS). The SCREAM process yields high-aspect-ratio (>50: 1) released, single crystal silicon structures with micrometer-scale minimum features and a suspension span of greater than 5 millimeters. Such structures include picofarad sensing capacitors and high force actuators that generate milli-Newton forces (100 mN/cm(2) at 40 Volts) and controllable, three dimensional motion and displacements. Examples of SCREAM devices and microinstruments include a materials testing or loading instrument, and micro-scanning tunneling microscopes.

引用

页码：49 / 73

页数：25

共 58 条

[1] ADAMS S, 1996, IEEE WORKSH MEMS FEB
[2] ADAMS S, TRANSDUCERS 95, V1, P438
[3] [Anonymous], 1993, SCANNING TUNNELING M
[4] FORMATION OF SUB-MICRON SILICON-ON-INSULATOR STRUCTURES BY LATERAL OXIDATION OF SUBSTRATE-SILICON ISLANDS
ARNEY, SC
MACDONALD, NC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (01): : 341 - 345
[5] AYON AA, 1995, P AS PAC MICR C TAEJ
[6] ANISOTROPIC ETCHING OF SILICON
BEAN, KE
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) : 1185 - 1193
[7] ATOMIC FORCE MICROSCOPE
BINNIG, G
QUATE, CF
GERBER, C
[J]. PHYSICAL REVIEW LETTERS, 1986, 56 (09) : 930 - 933
[8] BINNIG G, 1982, HELV PHYS ACTA, V55, P726
[9] CARR WN, 1991, MICROMECHANICS MICRO, V1
[10] CARR WN, 1994, MICROMECHANICS MICRO, V4

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