Origin of p(2 x 1) phase on Si(001) by noncontact atomic force microscopy at 5 k -: art. no. 106104

被引:42
作者
Li, YJ
Nomura, H
Ozaki, N
Naitoh, Y
Kageshima, M
Sugawara, Y
Hobbs, C
Kantorovich, L
机构
[1] Osaka Univ, Grad Sch Engn, Dept Appl Phys, Suita, Osaka 5650871, Japan
[2] Kings Coll London, Dept Phys, London WC2R 2LS, England
关键词
D O I
10.1103/PhysRevLett.96.106104
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The controversial issue of the origin of the p(2x1) reconstruction of the Si(001) surface observed in recent low temperature scanning tunneling microscopy experiments is clarified here using 5 K noncontact atomic force microscopy. The c(4x2) phase is observed at separations corresponding to weak tip-surface interactions, confirming that it is the ground state of the surface. At larger frequency shifts the p(2x1) phase of symmetric dimers is observed. By studying the interaction of a reactive Si tip with the c(4x2) Si(001) surface using an ab initio method, we find that the observed change in the surface reconstruction is an apparent effect caused by tip induced dimer flipping resulting in a modification of the surface structure and appearance of the p(2x1) phase in the image. Using an appropriate scanning protocol, one can manipulate the surface reconstruction at will, which has significance in nanotechnology.
引用
收藏
页数:4
相关论文
共 30 条
[1]   LOW-ENERGY ION-SCATTERING FROM THE SI(001) SURFACE [J].
AONO, M ;
HOU, Y ;
OSHIMA, C ;
ISHIZAWA, Y .
PHYSICAL REVIEW LETTERS, 1982, 49 (08) :567-570
[2]   Parametric tip model and force-distance relation for Hamaker constant determination from atomic force microscopy [J].
Argento, C ;
French, RH .
JOURNAL OF APPLIED PHYSICS, 1996, 80 (11) :6081-6090
[3]   ATOMIC AND ELECTRONIC-STRUCTURES OF RECONSTRUCTED SI(100) SURFACES [J].
CHADI, DJ .
PHYSICAL REVIEW LETTERS, 1979, 43 (01) :43-47
[4]   Flipping silicon dimers Si(100) using scanning tip microscopy: A theoretical investigation [J].
Cho, K ;
Joannopoulos, JD .
PHYSICAL REVIEW B, 1996, 53 (08) :4553-4556
[5]   SCANNING TUNNELING MICROSCOPY OF SI(001) [J].
HAMERS, RJ ;
TROMP, RM ;
DEMUTH, JE .
PHYSICAL REVIEW B, 1986, 34 (08) :5343-5357
[6]   Surface dynamics studied by perturbing the surface with the tip of a scanning tunneling microscope - Si(100) at 80 K [J].
Hata, K ;
Ishida, M ;
Miyake, K ;
Shigekawa, H .
APPLIED PHYSICS LETTERS, 1998, 73 (01) :40-42
[7]   PHOTOEMISSION-STUDIES OF INTRINSIC SURFACE-STATES ON SI(100) [J].
HIMPSEL, FJ ;
EASTMAN, DE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1297-1299
[8]   Theories of scanning probe microscopes at the atomic scale [J].
Hofer, WA ;
Foster, AS ;
Shluger, AL .
REVIEWS OF MODERN PHYSICS, 2003, 75 (04) :1287-1331
[9]   ORDER-DISORDER PHASE-TRANSITION ON THE SI(001) SURFACE - CRITICAL ROLE OF DIMER DEFECTS [J].
INOUE, K ;
MORIKAWA, Y ;
TERAKURA, K ;
NAKAYAMA, M .
PHYSICAL REVIEW B, 1994, 49 (20) :14774-14777
[10]   Vibration of the dimer on Si(001) surface excited by STM current [J].
Kawai, H ;
Narikiyo, O .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2004, 73 (02) :417-422