Surface dynamics studied by perturbing the surface with the tip of a scanning tunneling microscope - Si(100) at 80 K

被引：18

作者：

Hata, K ^{[1
]}

Ishida, M

Miyake, K

Shigekawa, H

机构：

[1] Univ Tsukuba, Inst Mat Sci, TARA, Tsukuba, Ibaraki 305, Japan

[2] Univ Tsukuba, CREST, Japan Sci & Technol Corp, JST, Tsukuba, Ibaraki 305, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 01期

关键词：

D O I：

10.1063/1.121716

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have utilized the tip of a scanning tunneling microscope to perturb a specific local structure (the C defect) of Si(100) at 80 K, and observed the dynamical symmetric double left right arrow buckled transition of the surrounding dimers. The observed large-scale transition implies that the configuration of the dimers is determined by a detailed balance among many elastic long-range forces generated by the surrounding C defects. (C) 1998 American Institute of Physics.

引用

页码：40 / 42

页数：3

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