SPATIALLY ANISOTROPIC ATOM EXTRACTION AROUND DEFECTS ON SI(001) USING A STM

被引：20

作者：

KOBAYASHI, A ^{[1
]}

GREY, F ^{[1
]}

SNYDER, E ^{[1
]}

AONO, M ^{[1
]}

机构：

[1] INST PHYS & CHEM RES,WAKO,SAITAMA 35101,JAPAN

来源：

PHYSICAL REVIEW B | 1994年 / 49卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.49.8067

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A scanning tunneling microscope has been used to extract atoms that are adjacent to native defects on the Si(001) surface. We found a spatially anisotropic extraction frequency for the different sites around a so-called C defect. The most common occurrence is the extraction of Si atoms from a C defect to form a double dimer vacancy. Extraction of double dimers from the neighboring dimer row on one side of the defect was also observed, but dimers in the neighboring dimer row on the other side of the defect and dimers adjacent to the defect in the same row were rarely extracted. In the case of native dimer vacancy defects, few neighboring Si atoms were found to be extracted. We discuss the relationship of these observations to the energetics of defects on the Si(001) surface.

引用

收藏

页码：8067 / 8070

页数：4

相关论文

共 25 条

[1] FINITE-TEMPERATURE PHASE-DIAGRAM OF VICINAL SI(100) SURFACES [J].

ALERHAND, OL ;

BERKER, AN ;

JOANNOPOULOS, JD ;

VANDERBILT, D ;

HAMERS, RJ ;

DEMUTH, JE .

PHYSICAL REVIEW LETTERS, 1990, 64 (20) :2406-2409

[2] LOW-ENERGY ION-SCATTERING FROM THE SI(001) SURFACE [J].

AONO, M ;

HOU, Y ;

OSHIMA, C ;

ISHIZAWA, Y .

PHYSICAL REVIEW LETTERS, 1982, 49 (08) :567-570

[3] PROBING THE CHEMISTRY AND MANIPULATING SURFACES AT THE ATOMIC SCALE WITH THE STM [J].

AVOURIS, P ;

LYO, IW .

APPLIED SURFACE SCIENCE, 1992, 60-1 :426-436

[4] STM STUDIES OF SI(100)-2 X-1 OXIDATION - DEFECT CHEMISTRY AND SI EJECTION [J].

AVOURIS, P ;

CAHILL, DG .

ULTRAMICROSCOPY, 1992, 42 :838-844

[5] HIGH-RESOLUTION INFRARED-SPECTROSCOPY OF ADSORBATES ON SEMICONDUCTOR SURFACES - HYDROGEN ON SI(100) AND GE(100) [J].

CHABAL, YJ .

SURFACE SCIENCE, 1986, 168 (1-3) :594-608

[6] SI(100) SURFACES - ATOMIC AND ELECTRONIC-STRUCTURES [J].

CHADI, DJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1290-1296

[7] ATOMIC AND ELECTRONIC-STRUCTURES OF RECONSTRUCTED SI(100) SURFACES [J].

CHADI, DJ .

PHYSICAL REVIEW LETTERS, 1979, 43 (01) :43-47

[8] ANGLE-RESOLVED-PHOTOEMISSION STUDY OF THE ELECTRONIC-STRUCTURE OF THE SI(001)C(4X2) SURFACE [J].

ENTA, Y ;

SUZUKI, S ;

KONO, S .

PHYSICAL REVIEW LETTERS, 1990, 65 (21) :2704-2707

[9] DETERMINATION OF THE LOCAL ELECTRONIC-STRUCTURE OF ATOMIC-SIZED DEFECTS ON SI(001) BY TUNNELING SPECTROSCOPY [J].

HAMERS, RJ ;

KOHLER, UK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (04) :2854-2859

[10] SCANNING TUNNELING MICROSCOPY OF SI(001) [J].

HAMERS, RJ ;

TROMP, RM ;

DEMUTH, JE .

PHYSICAL REVIEW B, 1986, 34 (08) :5343-5357