Analytical model of the "Shot Noise" effect in photoresist

被引:11
作者
Gallatin, GM
Liddle, JA
机构
[1] Bell Labs., Lucent Technologies, Murray Hill, NJ 07974
关键词
D O I
10.1016/S0167-9317(99)00105-7
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Decreasing feature size implies increased sensitivity to statistical fluctuations in various process parameters such as dose and the number of relevant bonds broken during post exposure bake. Here we develop a generic analytical model which accounts for essentially all these effects. The lowest order contribution to surface roughness from the bond statistics alone are shown to be very similar to recent experimental data. The lowest order contribution to a scaling law for predicting edge roughness is also derived.
引用
收藏
页码:365 / 368
页数:4
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