A STATISTICAL-ANALYSIS OF ULTRAVIOLET, X-RAY, AND CHARGED-PARTICLE LITHOGRAPHIES

被引：62

作者：

SMITH, HI

机构：

[1] MIT, Cambridge, MA, USA, MIT, Cambridge, MA, USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 01期

关键词：

D O I：

10.1116/1.583367

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：148 / 153

页数：6

共 10 条

[1] FABRICATION OF SILICON MOS DEVICES USING X-RAY LITHOGRAPHY
BERNACKI, SE
SMITH, HI
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (07) : 421 - 428
[2] PROXIMITY EFFECT IN ELECTRON-BEAM LITHOGRAPHY
CHANG, THP
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06): : 1271 - 1275
[3] EXPOSURE AND DEVELOPMENT MODELS USED IN ELECTRON-BEAM LITHOGRAPHY
HAWRYLUK, RJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (01): : 1 - 17
[4] KING MC, 1981, VLSI ELECTRONICS MIC, V1, pCH2
[5] NAGEL D, 1984, VLSI ELECTRONICS MIC, V8
[6] A PLASMA X-RAY SOURCE FOR X-RAY-LITHOGRAPHY
OKADA, I
SAITOH, Y
ITABASHI, S
YOSHIHARA, H
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01): : 243 - 247
[7] REIF R, 1965, FUNDAMENTALS STATIST, pCH1
[8] SMITH HI, 1980, 9TH P INT C EL ION B, P425
[9] SPILLER E, 1977, TOP APPL PHYS, V22, P35
[10] SUTHERLAND I, 1976, DARPA R1956ARPA REP