Optical investigation of residual doping species in 6H and 4H-SIC layers grown by chemical vapor deposition

被引：11

作者：

Neyret, E

Ferro, G

Juillaguet, S

Bluet, JM

Jaussaud, C

Camassel, J

机构：

[1] Univ Montpellier 2, Etud Semicond Grp, CNRS, F-34095 Montpellier 5, France

[2] CEA, LETI, Dept Microtechnol, F-38054 Grenoble 09, France

[3] ENSPG, LMGP, F-38054 St Martin Dheres, France

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 61-2卷

关键词：

SiC; CVD growth; residual doping; susceptor purity; photoluminescence;

D O I：

10.1016/S0921-5107(98)00513-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the results of a series of optical investigations performed on both 6H and 4H epitaxial layers grown at low rate (approximate to 1 mu m h(-1)) in a home-made cold-wall chemical vapor deposition (CVD) reactor. To keep the level of contamination as low as possible, attempts have been made to investigate the origin of residual dopants. In this way, we have found that aluminum comes only from the use of uncoated graphite susceptors. When using a SIC coated susceptor, we have found that the protection is only effective for about ten runs. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：253 / 257

页数：5