Zero-field spin splitting in an inverted In0.53Ga0.47As/In0.52Al0.48As heterostructure:: Band nonparabolicity influence and the subband dependence

被引：216

作者：

Hu, CM

Nitta, J

Akazaki, T

Takayanagi, H

Osaka, J

Pfeffer, P

Zawadzki, W

机构：

[1] NTT, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

[2] NTT, Photon Labs, Atsugi, Kanagawa 2430198, Japan

[3] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

来源：

PHYSICAL REVIEW B | 1999年 / 60卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.60.7736

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A gated inverted In0.52Al0.48As/In0.53Ga0.47As/Ln(0.52)Al(0.48)As quantum well is studied via magnetotransport. By analyzing the gate-voltage-dependent beating pattern observed in the Shubnikov-de Haas oscillation, we determine the gate voltage (or electron concentration) dependence of the spin-orbit coupling parameter alpha. Our experimental data and its analysis show that the band nonparabolicity effect cannot be neglected. For electron concentrations above 2 x 10(12) cm(-2), it causes a reduction of alpha up to 25%. We report the alpha value for the second subband. [S0163-1829(99)09335-2].

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页码：7736 / 7739

页数：4

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