Highly confined two-dimensional electron gas in an In0.52Al0.48As/In0.53Ga0.47As modulation-doped structure with a strained InAs quantum well

被引：19

作者：

Akazaki, T ^{[1
]}

Nitta, J ^{[1
]}

Takayanagi, H ^{[1
]}

Enoki, T ^{[1
]}

Arai, K ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, LSI LABS, ATSUGI, KANAGAWA 24301, JAPAN

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1996年 / 25卷 / 04期

关键词：

effective mass; electron confinement; InAs-inserted channel; Shubnikov-deHaas measurement; strain;

D O I：

10.1007/BF02666534

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper examines a detailed analysis by Shubnikov-de Haas measurements of the effective mass of two-dimensinal electron gas (2DEG) in an In0.52Al0.48As/In0.53Ga0.47As modulation-doped (MD) structure with an InAs quantum well inserted into the InGaAs channel (InAs-inserted channel). The measured effective mass of 2DEG in the InAs-inserted-channel MD structure is in good agreement with the calculated one of the strained InAs layer on In0.53Ga0.47As. This indicates that almost all of the 2DEG forms in the strained InAs quantum well. These results show that the InAs-inserted-channel MD structure improves the electron confinement, since the BDEG is confined in the InAs quantum well with the thickness of 4 nm.

引用

页码：745 / 748

页数：4

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