IMPROVING THE CHARACTERISTICS OF AN INALAS/INGAAS INVERTED HEMT BY INSERTING AN INAS LAYER INTO THE INGAAS CHANNEL

被引：12

作者：

AKAZAKI, T ^{[1
]}

ENOKI, T ^{[1
]}

ARAI, K ^{[1
]}

ISHII, Y ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, LSI LABS, ATSUGI, KANAGAWA 24301, JAPAN

来源：

SOLID-STATE ELECTRONICS | 1995年 / 38卷 / 05期

关键词：

D O I：

10.1016/0038-1101(95)98667-R

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel InAlAs/InGaAs inverted HEMT with a thin InAs layer inserted into the InGaAs channel (InAs-inserted-channel i-HEMT) is proposed and its electron transport properties and device performances are investigated. By optimizing the thickness of the InAs layer and its distance from the underlying InAlAs spacer layer, a maximum mobility of 13,600 cm2/Vs at 300 K and 63,500 cm2/Vs at 77 K were attained. The inverted HEMT structure resulted in an extremely high voltage gain, over 60 in a 0.7 mum gate-length device, and a gate-to-drain breakdown voltage as high as 9 V. This voltage gain resulted in a maximum oscillation frequency for a 0.7 mum gate-length device of 81 GHz, 14% higher than that of an InAs-inserted-channel normal HEMT.

引用

页码：997 / 1000

页数：4

共 12 条

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