USE OF SUPERLATTICES TO REALIZE INVERTED GAAS ALGAAS HETEROJUNCTIONS WITH LOW-TEMPERATURE MOBILITY OF 2X106 CM2/V S

被引：47

作者：

SAJOTO, T ^{[1
]}

SANTOS, M ^{[1
]}

HEREMANS, JJ ^{[1
]}

SHAYEGAN, M ^{[1
]}

HEIBLUM, M ^{[1
]}

WECKWERTH, MV ^{[1
]}

MEIRAV, U ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 09期

关键词：

D O I：

10.1063/1.100862

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：840 / 842

页数：3

共 10 条

[1] REALIZATION OF HIGH MOBILITY IN INVERTED ALXGA1-XAS/GAAS HETEROJUNCTIONS
CHO, NM
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[J]. APPLIED PHYSICS LETTERS, 1988, 52 (24) : 2037 - 2039
[2] USE OF A SUPER-LATTICE TO ENHANCE THE INTERFACE PROPERTIES BETWEEN 2 BULK HETEROLAYERS
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ARNOLD, D
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MORKOC, H
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (07) : 615 - 617
[3] ENGLISH JH, 1987, APPL PHYS LETT, V50, P1825
[4] HIGH-MOBILITY VARIABLE-DENSITY TWO-DIMENSIONAL ELECTRON-GAS IN INVERTED GAAS-ALGAAS HETEROJUNCTIONS
MEIRAV, U
HEIBLUM, M
STERN, F
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (15) : 1268 - 1270
[5] PETROFF PM, 1984, APPL PHYS LETT, V44, P216
[6] TWO-DIMENSIONAL ELECTRON-SYSTEM WITH EXTREMELY LOW DISORDER
SHAYEGAN, M
GOLDMAN, VJ
SANTOS, M
SAJOTO, T
ENGEL, L
TSUI, DC
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (21) : 2080 - 2082
[7] GROWTH OF LOW-DENSITY TWO-DIMENSIONAL ELECTRON-SYSTEM WITH VERY HIGH MOBILITY BY MOLECULAR-BEAM EPITAXY
SHAYEGAN, M
GOLDMAN, VJ
JIANG, C
SAJOTO, T
SANTOS, M
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (13) : 1086 - 1088
[8] SHAYEGAN M, IN PRESS J CRYST GRO
[9] GENERATION AND PROPAGATION OF DEFECTS INTO MOLECULAR-BEAM EPITAXIALLY GROWN GAAS FROM AN UNDERLYING GAAS SUBSTRATE
SHINOHARA, M
ITO, T
IMAMURA, Y
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (09) : 3449 - 3455
[10] HIGH-MOBILITY INVERTED SELECTIVELY DOPED HETEROJUNCTIONS
SHTRIKMAN, H
HEIBLUM, M
SEO, K
GALBI, DE
OSTERLING, L
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02): : 670 - 673

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