HIGH-MOBILITY INVERTED SELECTIVELY DOPED HETEROJUNCTIONS

[1] EPITAXIAL-GROWTH QUALITY OPTIMIZATION BY SUPERCOMPUTER [J]. APPLIED PHYSICS LETTERS, 1987, 51 (05) : 340 - 342

[2] USE OF A SUPER-LATTICE TO ENHANCE THE INTERFACE PROPERTIES BETWEEN 2 BULK HETEROLAYERS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (07) : 615 - 617

[3] GAAS STRUCTURES WITH ELECTRON-MOBILITY OF 5X10(6)CM2/VS [J]. APPLIED PHYSICS LETTERS, 1987, 50 (25) : 1826 - 1828

[4] HEIBLUM M, 1985, J VAC SCI TECHNOL B, V3, P820, DOI 10.1116/1.583110

[5] LOW-TEMPERATURE GROWTH OF GAAS AND ALAS-GAAS QUANTUM-WELL LAYERS BY MODIFIED MOLECULAR-BEAM EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (10): : L868 - L870

[6] A NEW HIGHLY-CONDUCTIVE (ALGA)AS/GAAS/(ALGA)AS SELECTIVELY-DOPED DOUBLE-HETEROJUNCTION FIELD-EFFECT TRANSISTOR (SD-DH-FET) [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (02): : L61 - L63

[7] JOYCE BA, 1985, 2ND P INT C MOD SEM, P1

[8] MEIRAV U, IN PRESS APPL PHYS L

[9] MOBILITY ENHANCEMENT IN INVERTED ALXGA1-XAS/GAAS MODULATION DOPED STRUCTURES AND ITS DEPENDENCE ON DONOR-ELECTRON SEPARATION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (12) : L913 - L916

[10] IMPURITY TRAPPING, INTERFACE STRUCTURE, AND LUMINESCENCE OF GAAS QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1984, 44 (02) : 217 - 219

[1] EPITAXIAL-GROWTH QUALITY OPTIMIZATION BY SUPERCOMPUTER [J]. APPLIED PHYSICS LETTERS, 1987, 51 (05) : 340 - 342

[2] USE OF A SUPER-LATTICE TO ENHANCE THE INTERFACE PROPERTIES BETWEEN 2 BULK HETEROLAYERS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (07) : 615 - 617

[3] GAAS STRUCTURES WITH ELECTRON-MOBILITY OF 5X10(6)CM2/VS [J]. APPLIED PHYSICS LETTERS, 1987, 50 (25) : 1826 - 1828

[4] HEIBLUM M, 1985, J VAC SCI TECHNOL B, V3, P820, DOI 10.1116/1.583110

[5] LOW-TEMPERATURE GROWTH OF GAAS AND ALAS-GAAS QUANTUM-WELL LAYERS BY MODIFIED MOLECULAR-BEAM EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (10): : L868 - L870

[6] A NEW HIGHLY-CONDUCTIVE (ALGA)AS/GAAS/(ALGA)AS SELECTIVELY-DOPED DOUBLE-HETEROJUNCTION FIELD-EFFECT TRANSISTOR (SD-DH-FET) [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (02): : L61 - L63

[7] JOYCE BA, 1985, 2ND P INT C MOD SEM, P1

[8] MEIRAV U, IN PRESS APPL PHYS L

[9] MOBILITY ENHANCEMENT IN INVERTED ALXGA1-XAS/GAAS MODULATION DOPED STRUCTURES AND ITS DEPENDENCE ON DONOR-ELECTRON SEPARATION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (12) : L913 - L916

[10] IMPURITY TRAPPING, INTERFACE STRUCTURE, AND LUMINESCENCE OF GAAS QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1984, 44 (02) : 217 - 219