共 14 条
- [1] CHAMBERS F, COMMUNICATION
- [2] THE INFLUENCE OF GALLIUM INGOT CLEANING PROCEDURES ON THE CARBON IMPURITY LEVEL IN MOLECULAR-BEAM EPITAXY GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 806 - 807
- [3] GAAS STRUCTURES WITH ELECTRON-MOBILITY OF 5X10(6)CM2/VS [J]. APPLIED PHYSICS LETTERS, 1987, 50 (25) : 1826 - 1828
- [4] MOBILITY OF THE TWO-DIMENSIONAL ELECTRON-GAS AT SELECTIVITY DOPED N-TYPE ALXGA1-XAS/GAAS HETEROJUNCTIONS WITH CONTROLLED ELECTRON CONCENTRATIONS [J]. PHYSICAL REVIEW B, 1986, 33 (12): : 8291 - 8303
- [5] JIANG C, UNPUB
- [6] JIANG C, 1987, B AM PHYS SOC, V32, P715
- [9] MOUSTAKAS TD, 1986, 1986 P NE REG M TMS, P263