DELTA-(DELTA-) DOPING IN MBE-GROWN GAAS - CONCEPT AND DEVICE APPLICATION

[1] NONLINEAR HIGH-FREQUENCY RESPONSE OF GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1986, 48 (23) : 1620 - 1622

[2] HORIKOSHI Y, 1986, JPN J APPL PHYS, V25, P1566

[3] KOCH F, 1986, SPRINGER SERIES SOLI, V67, P175

[4] PHOTOCONDUCTIVITY IN SELECTIVELY N-DOPED AND P-DOPED ALXGA1-XAS/GAAS HETEROSTRUCTURES [J]. SOLID-STATE ELECTRONICS, 1986, 29 (02) : 173 - 180

[5] RADIATIVE ELECTRON-HOLE RECOMBINATION IN A NEW SAWTOOTH SEMICONDUCTOR SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J]. PHYSICAL REVIEW B, 1985, 32 (02): : 1085 - 1089

[6] INTERPRETATION OF CAPACITANCE-VOLTAGE PROFILES FROM DELTA-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (07): : 966 - 970

[7] THE DELTA-DOPED FIELD-EFFECT TRANSISTOR (DELTA-FET) [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) : 625 - 632

[8] GAAS SAWTOOTH SUPERLATTICE LASER EMITTING AT WAVELENGTHS LAMBDA GREATER-THAN 0.9 MU-M [J]. APPLIED PHYSICS LETTERS, 1985, 47 (03) : 219 - 221

[9] THE DELTA-DOPED FIELD-EFFECT TRANSISTOR [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (08): : L608 - L610

[10] SCHUBERT EF, IN PRESS

[1] NONLINEAR HIGH-FREQUENCY RESPONSE OF GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1986, 48 (23) : 1620 - 1622

[2] HORIKOSHI Y, 1986, JPN J APPL PHYS, V25, P1566

[3] KOCH F, 1986, SPRINGER SERIES SOLI, V67, P175

[4] PHOTOCONDUCTIVITY IN SELECTIVELY N-DOPED AND P-DOPED ALXGA1-XAS/GAAS HETEROSTRUCTURES [J]. SOLID-STATE ELECTRONICS, 1986, 29 (02) : 173 - 180

[5] RADIATIVE ELECTRON-HOLE RECOMBINATION IN A NEW SAWTOOTH SEMICONDUCTOR SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J]. PHYSICAL REVIEW B, 1985, 32 (02): : 1085 - 1089

[6] INTERPRETATION OF CAPACITANCE-VOLTAGE PROFILES FROM DELTA-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (07): : 966 - 970

[7] THE DELTA-DOPED FIELD-EFFECT TRANSISTOR (DELTA-FET) [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) : 625 - 632

[8] GAAS SAWTOOTH SUPERLATTICE LASER EMITTING AT WAVELENGTHS LAMBDA GREATER-THAN 0.9 MU-M [J]. APPLIED PHYSICS LETTERS, 1985, 47 (03) : 219 - 221

[9] THE DELTA-DOPED FIELD-EFFECT TRANSISTOR [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (08): : L608 - L610

[10] SCHUBERT EF, IN PRESS