THE DELTA-DOPED FIELD-EFFECT TRANSISTOR (DELTA-FET)

被引:216
作者
SCHUBERT, EF [1 ]
FISCHER, A [1 ]
PLOOG, K [1 ]
机构
[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER
关键词
D O I
10.1109/T-ED.1986.22543
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:625 / 632
页数:8
相关论文
共 35 条
[1]   GAAS LOWER CONDUCTION-BAND MINIMA - ORDERING AND PROPERTIES [J].
ASPNES, DE .
PHYSICAL REVIEW B, 1976, 14 (12) :5331-5343
[2]  
CAPPY A, 1982, IEEE GAAS IC S, P79
[3]   ELECTRON-SCATTERING BY IONIZED IMPURITIES IN SEMICONDUCTORS [J].
CHATTOPADHYAY, D ;
QUEISSER, HJ .
REVIEWS OF MODERN PHYSICS, 1981, 53 (04) :745-768
[4]   OPTIMIZATION OF MODULATION-DOPED HETEROSTRUCTURES FOR TEGFET OPERATION AT ROOM-TEMPERATURE [J].
DAMBKES, H ;
BROCKERHOFF, W ;
HEIME, K ;
PLOOG, K ;
WEIMANN, G ;
SCHLAPP, W .
ELECTRONICS LETTERS, 1984, 20 (15) :615-618
[5]  
DAMBKES H, 1984, 2 DIMENSIONAL SYSTEM, P125
[6]   CHARGE CONTROL OF THE HETEROJUNCTION TWO-DIMENSIONAL ELECTRON-GAS FOR MESFET APPLICATION [J].
DELAGEBEAUDEUF, D ;
LINH, NT .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (07) :790-795
[7]   METAL-(N) ALGAAS-GAAS TWO-DIMENSIONAL ELECTRON-GAS FET [J].
DELAGEBEAUDEUF, D ;
LINH, NT .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (06) :955-960
[8]   FIELD-DEPENDENCE OF MOBILITY IN AL0.2GA0.8AS-GAAS HETEROJUNCTIONS AT VERY LOW FIELDS [J].
DRUMMOND, TJ ;
KEEVER, M ;
KOPP, W ;
MORKOC, H ;
HESS, K ;
STREETMAN, BG ;
CHO, AY .
ELECTRONICS LETTERS, 1981, 17 (15) :545-547
[9]   MODEL FOR MODULATION DOPED FIELD-EFFECT TRANSISTOR [J].
DRUMMOND, TJ ;
MORKOC, H ;
LEE, K ;
SHUR, M .
ELECTRON DEVICE LETTERS, 1982, 3 (11) :338-341
[10]   MONTE-CARLO SIMULATION OF REAL-SPACE ELECTRON-TRANSFER IN GAAS-ALGAAS HETEROSTRUCTURES [J].
GLISSON, TH ;
HAUSER, JR ;
LITTLEJOHN, MA ;
HESS, K ;
STREETMAN, BG ;
SHICHIJO, H .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (10) :5445-5449