NONLINEAR HIGH-FREQUENCY RESPONSE OF GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

被引：6

作者：

ABELES, JH ^{[1
]}

TU, CW ^{[1
]}

SCHWARZ, SA ^{[1
]}

BRENNAN, TM ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

关键词：

D O I：

10.1063/1.96836

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1620 / 1622

页数：3

共 7 条

[1] Abeles J. H., 1984, 1984 IEEE MTT-S International Microwave Symposium Digest. Expanding Microwave Horizons (Cat. No. 84CH2034-7), P224
[2] BENEKING H, 1975, ESSDERC 75, P236
[3] BENEKING H, 1972, Patent No. 3693055
[4] BURIED CHANNEL GAAS-MESFETS - SCATTERING PARAMETER AND LINEARITY DEPENDENCE ON THE CHANNEL DOPING PROFILE
DEKKERS, JJM
PONSE, F
BENEKING, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (09) : 1065 - 1070
[5] CHARACTERIZATION OF NONLINEARITIES IN MICROWAVE DEVICES AND SYSTEMS
HEITER, GL
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1973, MT21 (12) : 797 - 805
[6] PUCEL RA, 1978, ELECTRON LETT, V14, P208
[7] GRADED CHANNEL FETS - IMPROVED LINEARITY AND NOISE-FIGURE
WILLIAMS, RE
SHAW, DW
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) : 600 - 605