VERY HIGH-PURITY GAAS - FREE EXCITON DOMINATED 5K PHOTOLUMINESCENCE AND MAGNETOPHOTOLUMINESCENCE SPECTRA

被引：20

作者：

KOTELES, ES

ELMAN, BS

ZEMON, SA

机构：

[1] GTE Lab Inc, Waltham, MA, USA, GTE Lab Inc, Waltham, MA, USA

来源：

关键词：

D O I：

10.1016/0038-1098(87)90412-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：703 / 706

页数：4

共 9 条

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[4] KOTELES ES, 1985, 17TH P INT C PHYS SE, P1247
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[7] MAGNETO-REFLECTANCE OF IS EXCITON GROUND-STATES IN INP AND GAAS
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[8] STUDIES OF FREE-TO-BOUND ACCEPTOR PHOTOLUMINESCENCE IN AN APPLIED MAGNETIC-FIELD FOR UNDOPED GAAS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY AND MOLECULAR-BEAM EPITAXY
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[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (08) : 2828 - 2832
[9] ZEMON S, UNPUB