STUDIES OF FREE-TO-BOUND ACCEPTOR PHOTOLUMINESCENCE IN AN APPLIED MAGNETIC-FIELD FOR UNDOPED GAAS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY AND MOLECULAR-BEAM EPITAXY

被引：20

作者：

ZEMON, S

NORRIS, P

KOTELES, ES

LAMBERT, G

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 08期

关键词：

D O I：

10.1063/1.336937

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2828 / 2832

页数：5

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