共 13 条
- [1] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) : 1041 - 1053ASHEN, DJDEAN, PJHURLE, DTJMULLIN, JBWHITE, AM
- [2] IMPURITY AND DEFECT LEVELS IN BERYLLIUM-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) : 6391 - 6398BHATTACHARYA, PKBUHLMANN, HJILEGEMS, MSTAEHLI, JL
- [3] LOW-TEMPERATURE PHOTO-LUMINESCENCE OF LIGHTLY SI-DOPED AND UNDOPED MBE GAAS[J]. JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (04) : 847 - 866BRIONES, FCOLLINS, DM
- [4] AN OPTICAL CHARACTERIZATION OF DEFECT LEVELS INDUCED BY MBE GROWTH OF GAAS[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 811 - 815CONTOUR, JPNEU, GLEROUX, MCHAIX, CLEVESQUE, BETIENNE, P
- [5] THE OCCURRENCE OF SHARP EXCITON-LIKE FEATURES IN LOW-TEMPERATURE PHOTO-LUMINESCENCE SPECTRA FROM MBE GROWN GAAS[J]. SOLID STATE COMMUNICATIONS, 1982, 43 (12) : 917 - 919DOBSON, PJSCOTT, GBNEAVE, JHJOYCE, BA
- [6] EXPERIMENTAL PROOF OF THE EXISTENCE OF A NEW ELECTRONIC COMPLEX IN SILICON[J]. PHYSICAL REVIEW LETTERS, 1960, 4 (07) : 361 - 363HAYNES, JR
- [7] KUNZEL H, 1980, APPL PHYS LETT, V37, P416, DOI 10.1063/1.91927
- [8] LEROUX G, UNPUB
- [9] PHOTO-LUMINESCENCE STUDY OF THE INCORPORATION OF SILICON IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) : 4202 - 4204MENDEZ, EEHEIBLUM, MFISHER, RKLEM, JTHORNE, REMORKOC, H
- [10] LUMINESCENCE PROPERTIES OF GAAS-GA1-XALX AS DOUBLE HETEROSTRUCTURES AND MULTIQUANTUM-WELL SUPER-LATTICES GROWN BY MOLECULAR-BEAM EPITAXY[J]. APPLIED PHYSICS LETTERS, 1981, 38 (12) : 965 - 967PETROFF, PMWEISBUCH, CDINGLE, RGOSSARD, ACWIEGMANN, W