EFFECT OF AS/GA FLUX RATIO ON THE PHOTOLUMINESCENCE SPECTRA OF LOW DONOR CONCENTRATION MBE GAAS

被引：21

作者：

SALERNO, JP

KOTELES, ES

GORMLEY, JV

SOWELL, BJ

BRODY, EM

CHI, JY

HOLMSTROM, RP

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 02期

关键词：

D O I：

10.1116/1.583150

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：618 / 621

页数：4

共 16 条

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[6] GROWTH OF HIGH-PURITY GAAS-LAYERS BY MOLECULAR-BEAM EPITAXY [J].

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[7]

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[8]

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[9] THE EFFECT OF ARSENIC VAPOR SPECIES ON ELECTRICAL AND OPTICAL-PROPERTIES OF GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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[10]

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