THE EFFECT OF ARSENIC VAPOR SPECIES ON ELECTRICAL AND OPTICAL-PROPERTIES OF GAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：42

作者：

KUNZEL, H

KNECHT, J

JUNG, H

WUNSTEL, K

PLOOG, K

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1982年 / 28卷 / 03期

关键词：

D O I：

10.1007/BF00617982

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

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页码：167 / 173

页数：7

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