REDUCTION OF THE ACCEPTOR IMPURITY BACKGROUND IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：27

作者：

LARKINS, EC ^{[1
]}

HELLMAN, ES ^{[1
]}

SCHLOM, DG ^{[1
]}

HARRIS, JS ^{[1
]}

KIM, MH ^{[1
]}

STILLMAN, GE ^{[1
]}

机构：

[1] UNIV ILLINOIS,CTR COMPOUND SEMICOND MICROELECTR,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 07期

关键词：

D O I：

10.1063/1.97597

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：391 / 393

页数：3

共 11 条

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[9] CHARACTERIZATION OF HIGH-PURITY SI-DOPED MOLECULAR-BEAM EPITAXIAL GAAS [J].

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[10]

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