MOLECULAR-BEAM EPITAXY OF GALLIUM-ARSENIDE USING DIRECT RADIATIVE SUBSTRATE HEATING

被引：25

作者：

HELLMAN, ES

PITNER, PM

HARWIT, A

LIU, D

YOFFE, GW

HARRIS, JS

CAFFEE, B

HIERL, T

机构：

[1] VARIAN ASSOCIATES,DIV THIN FILM TECHNOL,SANTA CLARA,CA 95054

[2] VARIAN ASSOCIATES,DIV SOLID STATE MICROWAVE,SANTA CLARA,CA 95054

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 02期

关键词：

D O I：

10.1116/1.583377

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：574 / 577

页数：4

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