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THE RELATIONS FOR ELECTRON EFFECTIVE MASSES OF STRAINED INXGA1-XAS LAYERS

被引：4
作者：
HRIVNAK, L
机构：
[1] Institute of Electrical Engineering, Slovak Academy of Sciences
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1991年 / 123卷 / 02期
关键词：
D O I：
10.1002/pssa.2211230230
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
[No abstract available]
引用
收藏
页码：K133 / K137
页数：5
相关论文
共 5 条
[1]  
FOULON, 1990, 20TH INT C PHYS SEM
[2]   COMPOSITIONAL DEPENDENCES OF BAND-GAP ENERGY AND ELECTRON AND LIGHT HOLE EFFECTIVE MASSES IN INXGA1-XAS [J].
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[3]   OPTICAL STUDIES OF INXGA1-XAS/GAAS STRAINED-LAYER QUANTUM WELLS [J].
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[4]   BAND-EDGE DISCONTINUITIES OF STRAINED-LAYER INXGA1-XAS/GAAS HETEROJUNCTIONS AND QUANTUM WELLS [J].
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[5]   BAND NONPARABOLICITIES IN LATTICE-MISMATCH-STRAINED BULK SEMICONDUCTOR LAYERS [J].
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SPUTZ, SK .
PHYSICAL REVIEW B, 1990, 41 (12) :8431-8439
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