BAND-EDGE DISCONTINUITIES OF STRAINED-LAYER INXGA1-XAS/GAAS HETEROJUNCTIONS AND QUANTUM WELLS

被引:94
作者
NIKI, S
LIN, CL
CHANG, WSC
WIEDER, HH
机构
关键词
D O I
10.1063/1.101649
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1339 / 1341
页数:3
相关论文
共 17 条
[1]   MATERIAL PARAMETERS OF IN1-XGAXASYP1-Y AND RELATED BINARIES [J].
ADACHI, S .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) :8775-8792
[2]   PHOTOLUMINESCENCE AND PHOTOCONDUCTIVITY MEASUREMENTS ON BAND-EDGE OFFSETS IN STRAINED MOLECULAR-BEAM-EPITAXY-GROWN INX GA1-XAS/GAAS QUANTUM WELLS [J].
ANDERSSON, TG ;
CHEN, ZG ;
KULAKOVSKII, VD ;
UDDIN, A ;
VALLIN, JT .
PHYSICAL REVIEW B, 1988, 37 (08) :4032-4038
[3]   ENERGY BAND-GAP SHIFT WITH ELASTIC STRAIN IN GAXIN1-XP EPITAXIAL LAYERS ON (001) GAAS SUBSTRATES [J].
ASAI, H ;
OE, K .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) :2052-2056
[4]   STRAIN EFFECTS IN INGAAS/HAAS SUPERLATTICES [J].
DAHL, DA .
SOLID STATE COMMUNICATIONS, 1987, 61 (12) :825-826
[5]  
Heiblum M., COMMUNICATION
[6]   OPTICAL INVESTIGATION OF HIGHLY STRAINED INGAAS-GAAS MULTIPLE QUANTUM-WELLS [J].
JI, G ;
HUANG, D ;
REDDY, UK ;
HENDERSON, TS ;
HOUDRE, R ;
MORKOC, H .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (08) :3366-3373
[7]   OPTICAL INVESTIGATION OF A NEW TYPE OF VALENCE-BAND CONFIGURATION IN INXGA1-XAS-GAAS STRAINED SUPERLATTICES [J].
MARZIN, JY ;
CHARASSE, MN ;
SERMAGE, B .
PHYSICAL REVIEW B, 1985, 31 (12) :8298-8301
[8]   DEFECTS IN EPITAXIAL MULTILAYERS .3. PREPARATION OF ALMOST PERFECT MULTILAYERS [J].
MATTHEWS, JW ;
BLAKESLEE, AE .
JOURNAL OF CRYSTAL GROWTH, 1976, 32 (02) :265-273
[9]   LARGE VALENCE-BAND OFFSET IN STRAINED-LAYER INXGA1-XAS-GAAS QUANTUM-WELLS [J].
MENENDEZ, J ;
PINCZUK, A ;
WERDER, DJ ;
SPUTZ, SK ;
MILLER, RC ;
SIVCO, DL ;
CHO, AY .
PHYSICAL REVIEW B, 1987, 36 (15) :8165-8168
[10]   DETERMINATION OF THE CONDUCTION-BAND DISCONTINUITIES OF GAAS/ALXGA1-XAS INTERFACES BY CAPACITANCE-VOLTAGE MEASUREMENTS [J].
OKUMURA, H ;
MISAWA, S ;
YOSHIDA, S ;
GONDA, S .
APPLIED PHYSICS LETTERS, 1985, 46 (04) :377-379