Effects of built-in polarization on InGaN-GaN vertical-cavity surface-emitting lasers

被引：58

作者：

Piprek, J ^{[1
]}

Farrell, R ^{[1
]}

DenBaars, S ^{[1
]}

Nakamura, S ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2006年 / 18卷 / 1-4期

关键词：

electron leakage; GaN-based light emitter; InGaN quantum well; numerical simulation; piezoelectric effect; polarization; vertical-cavity surface-emitting laser (VCSEL);

D O I：

10.1109/LPT.2005.860045

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate the effect of built-in spontaneous and piezoelectric polarization on the internal device physics of current-injected GaN-based vertical-cavity surface-emitting lasers (VCSELs) with strained InGaN quantum wells. Advanced device simulation is applied to a previously manufactured device design featuring dielectric mirrors and an indium-tin-oxide current injection layer. Contrary to common perception, we show: 1) that only a small fraction of the built-in quantum-well polarization is screened at typical injection current densities and 2) that the polarization of the AlGaN electron stopper layer has a strong effect on the VCSEL threshold current which can be partly compensated for by higher p-doping.

引用

页码：7 / 9

页数：3

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