Evidence for nonlinear macroscopic polarization in III-V nitride alloy heterostructures

被引：769

作者：

Fiorentini, V ^{[1
]}

Bernardini, F

Ambacher, O

机构：

[1] Univ Cagliari, Ist Nazl Fis Mat, Cagliari, Italy

[2] Univ Cagliari, Dipartimento Fis, Cagliari, Italy

[3] Tech Univ Munich, Walter Schottky Inst, D-8046 Garching, Germany

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 07期

关键词：

D O I：

10.1063/1.1448668

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We provide explicit rules to calculate the nonlinear polarization for nitride alloys of arbitrary composition, and hence, the bound sheet charge induced by polarization discontinuity at the interfaces between different alloy and binary (epi)layers. We then present experimental results and simulations of polarization-related quantities in selected nitride-alloy-based heterostructure systems. The agreement of experiment and simulation, also in comparison to previous approaches, strongly suggests that the macroscopic polarization of nitride alloys is indeed nonlinear as a function of composition. (C) 2002 American Institute of Physics.

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页码：1204 / 1206

页数：3

相关论文

共 17 条

[1] Growth and applications of Group III nitrides [J].

Ambacher, O .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1998, 31 (20) :2653-2710

[2] Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures [J].

Ambacher, O ;

Smart, J ;

Shealy, JR ;

Weimann, NG ;

Chu, K ;

Murphy, M ;

Schaff, WJ ;

Eastman, LF ;

Dimitrov, R ;

Wittmer, L ;

Stutzmann, M ;

Rieger, W ;

Hilsenbeck, J .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (06) :3222-3233

[3] Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures [J].

Ambacher, O ;

Foutz, B ;

Smart, J ;

Shealy, JR ;

Weimann, NG ;

Chu, K ;

Murphy, M ;

Sierakowski, AJ ;

Schaff, WJ ;

Eastman, LF ;

Dimitrov, R ;

Mitchell, A ;

Stutzmann, M .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (01) :334-344

[4] Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1-xN films [J].

Angerer, H ;

Brunner, D ;

Freudenberg, F ;

Ambacher, O ;

Stutzmann, M ;

Hopler, R ;

Metzger, T ;

Born, E ;

Dollinger, G ;

Bergmaier, A ;

Karsch, S ;

Korner, HJ .

APPLIED PHYSICS LETTERS, 1997, 71 (11) :1504-1506

[5] Macroscopic polarization and band offsets at nitride heterojunctions [J].

Bernardini, F ;

Fiorentini, V .

PHYSICAL REVIEW B, 1998, 57 (16) :R9427-R9430

[6]

Bernardini F, 1999, PHYS STATUS SOLIDI B, V216, P391, DOI 10.1002/(SICI)1521-3951(199911)216:1<391::AID-PSSB391>3.0.CO

[7]

2-K

[8] Nonlinear macroscopic polarization in III-V nitride alloys [J].

Bernardini, F ;

Fiorentini, V .

PHYSICAL REVIEW B, 2001, 64 (08)

[9] Spontaneous polarization and piezoelectric constants of III-V nitrides [J].

Bernardini, F ;

Fiorentini, V ;

Vanderbilt, D .

PHYSICAL REVIEW B, 1997, 56 (16) :10024-10027

[10] Effects of macroscopic polarization in III-V nitride multiple quantum wells [J].

Fiorentini, V ;

Bernardini, F ;

Della Sala, F ;

Di Carlo, A ;

Lugli, P .

PHYSICAL REVIEW B, 1999, 60 (12) :8849-8858