Effects of macroscopic polarization in III-V nitride multiple quantum wells

被引：507

作者：

Fiorentini, V ^{[1
]}

Bernardini, F

Della Sala, F

Di Carlo, A

Lugli, P

机构：

[1] Univ Cagliari, Dipartimento Fis, Ist Nazl Fis Mat, Cagliari, Italy

[2] Tech Univ Munich, Walter Schottky Inst, D-8046 Garching, Germany

[3] Univ Roma Tor Vergata, Ist Nazl Fis Mat, Dipartimento Ingn Elettron, Rome, Italy

来源：

PHYSICAL REVIEW B | 1999年 / 60卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.60.8849

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Huge built-in electric fields have been predicted to exist in wurtzite III-V nitrides thin films and multilayers. Such fields originate from heterointerface discontinuities of the macroscopic bulk polarization of the nitrides. Here we discuss the background theory, the role of spontaneous polarization in this context, and the practical implications of built-in polarization fields in nitride nanostructures. To support our arguments, we present detailed self-consistent tight-binding simulations of typical nitride quantum well structures in which polarization effects are dominant. [S0163-1829(99)02235-3].

引用

页码：8849 / 8858

页数：10

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