Luminescence spectra from InGaN multiquantum wells heavily doped with Si

被引：91

作者：

Deguchi, T ^{[1
]}

Shikanai, A

Torii, K

Sota, T

Chichibu, S

Nakamura, S

机构：

[1] Waseda Univ, Dept Elect Engn & Comp Engn, Shinjuku Ku, Tokyo 1698555, Japan

[2] Waseda Univ, Mat Res Lab Biosci & Photon, Grad Sch Sci & Engn, Shinjuku Ku, Tokyo 1698555, Japan

[3] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[4] Sci Univ Tokyo, Fac Sci & Technol, Noda, Chiba 2780022, Japan

[5] Nichia Chem Ind Ltd, Dept Res & Dev, Anan, Tokushima 7740044, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 25期

关键词：

D O I：

10.1063/1.121594

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A systematic study has been carried out on emission spectra of heavily Si-doped InGaN multiquantum wells with different degree of potential fluctuation of InGaN in the lateral plane by the use of the various excitation sources. It is demonstrated that the quantum-confined Stark effect due to the piezoelectric field plays no serious role in optical spectra under appropriate doping conditions and, then, the degree of potential fluctuation of InGaN alloys is clearly reflected in spontaneous emission spectra. (C) 1998 American Institute of Physics. [S0003-6951(98)02025-7].

引用

页码：3329 / 3331

页数：3

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