Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm

被引：920

作者：

Narukawa, Y ^{[1
]}

Kawakami, Y ^{[1
]}

Funato, M ^{[1
]}

Fujita, S ^{[1
]}

Nakamura, S ^{[1
]}

机构：

[1] NICHIA CHEM IND LTD,DEPT RES & DEV,TOKUSHIMA 774,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 08期

关键词：

D O I：

10.1063/1.118455

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Structural analysis was performed on a purple laser diode composed of In0.20Ga0.80N (3 nm)/In0.05Ca0.9N (6 nm) multiple quantum wells, by employing transmission electron microscopy and energy-dispersive x-ray microanalysis, both of which are assessed from the cross-sectional direction. It was found that the contrast of light and shade in the well layers corresponds to the difference in In composition. The main radiative recombination was attributed to excitons localized at deep traps which probably originate from the In-rich region in the wells acting as quantum dots. Photopumped lasing was observed at the high energy side of the main spontaneous emission bands. (C) 1997 American Institute of Physics.

引用

页码：981 / 983

页数：3

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