InGaN multi-quantum-well-structure laser diodes with cleaved mirror cavity facets

被引：273

作者：

Nakamura, S

Senoh, M

Nagahama, S

Iwasa, N

Yamada, T

Matsushita, T

Kiyoku, H

Sugimoto, Y

机构：

[1] Nichia Chemical Industries, Ltd, Tokushima

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1996年 / 35卷 / 2B期

关键词：

InGaN; laser diode; A-face; R-face; sapphire; multi-quantum-well structure; III-V nitride; cleavage;

D O I：

10.1143/JJAP.35.L217

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InGaN multi-quantum-well (MQW)-structure laser diodes (LDs) fabricated from III-V nitride materials were grown by metalorganic chemical vapor deposition on sapphire substrate with (<11(2)over bar 0>) orientation (A face). The mirror facet for a laser cavity was formed by cleaving the substrate along the (<1(1)over bar 02>) orientation (R-face). As an active layer, the InGaN MQW structure was used. The InGaN MQW LDs showed a sharp peak of light output at 415.6 nm that had a full width at half-maximum of 0.05 nm under pulsed current injection of L17 A at room temperature. The laser threshold current density was 9.6 kA/cm(2).

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收藏

页码：L217 / L220

页数：4

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