Nonlinear macroscopic polarization in III-V nitride alloys

被引:258
作者
Bernardini, F [1 ]
Fiorentini, V
机构
[1] Univ Cagliari, Ist Nazl Fis Mat, Cagliari, Italy
[2] Univ Cagliari, Dipartimento Fis, Cagliari, Italy
关键词
D O I
10.1103/PhysRevB.64.085207
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We study the dependence of macroscopic polarization on composition and strain in wurtzite III-V nitride ternary alloys using ab initio density-functional techniques. The spontaneous polarization is characterized by a large bowing, strongly dependent on the alloy microscopic structure. The bowing is due to the different response of the bulk binaries to hydrostatic pressure and to internal strain effects (bond alternation). Disorder effects are instead minor. Deviations from parabolicity (simple bowing) are of order 10% in the most extreme case of AlInN alloys, much less at all other compositions. Piezoelectric polarization is also strongly nonlinear. At variance with the spontaneous component, this behavior is independent of microscopic alloy structure or disorder effects, and due entirely to the nonlinear strain dependence of the bulk piezoelectric response. It is thus possible to predict the piezoelectric polarization for any alloy composition using the piezoelectricity of the parent binaries.
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页数:7
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共 30 条
[1]   Growth and applications of Group III nitrides [J].
Ambacher, O .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1998, 31 (20) :2653-2710
[2]   Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures [J].
Ambacher, O ;
Smart, J ;
Shealy, JR ;
Weimann, NG ;
Chu, K ;
Murphy, M ;
Schaff, WJ ;
Eastman, LF ;
Dimitrov, R ;
Wittmer, L ;
Stutzmann, M ;
Rieger, W ;
Hilsenbeck, J .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (06) :3222-3233
[3]   Macroscopic polarization and band offsets at nitride heterojunctions [J].
Bernardini, F ;
Fiorentini, V .
PHYSICAL REVIEW B, 1998, 57 (16) :R9427-R9430
[4]   Spontaneous polarization and piezoelectric constants of III-V nitrides [J].
Bernardini, F ;
Fiorentini, V ;
Vanderbilt, D .
PHYSICAL REVIEW B, 1997, 56 (16) :10024-10027
[5]   Accurate calculation of polarization-related quantities in semiconductors [J].
Bernardini, F ;
Fiorentini, V ;
Vanderbilt, D .
PHYSICAL REVIEW B, 2001, 63 (19)
[6]   Spontaneous polarization and piezoelectric field in GaN/Al0.15Ga0.85N quantum wells:: Impact on the optical spectra [J].
Cingolani, R ;
Botchkarev, A ;
Tang, H ;
Morkoc, H ;
Traetta, G ;
Coli, G ;
Lomascolo, M ;
Di Carlo, A ;
Della Sala, F ;
Lugli, P .
PHYSICAL REVIEW B, 2000, 61 (04) :2711-2715
[7]   Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures [J].
Della Sala, F ;
Di Carlo, A ;
Lugli, P ;
Bernardini, F ;
Fiorentini, V ;
Scholz, R ;
Jancu, JM .
APPLIED PHYSICS LETTERS, 1999, 74 (14) :2002-2004
[8]   Doping screening of polarization fields in nitride heterostructures [J].
Di Carlo, A ;
Della Sala, F ;
Lugli, P ;
Fiorentini, V ;
Bernardini, F .
APPLIED PHYSICS LETTERS, 2000, 76 (26) :3950-3952
[9]   Effects of macroscopic polarization in III-V nitride multiple quantum wells [J].
Fiorentini, V ;
Bernardini, F ;
Della Sala, F ;
Di Carlo, A ;
Lugli, P .
PHYSICAL REVIEW B, 1999, 60 (12) :8849-8858
[10]   Observation of long-lived oblique excitons in GaN-AlGaN multiple quantum wells [J].
Gil, B ;
Lefebvre, P ;
Allègre, J ;
Mathieu, H ;
Grandjean, N ;
Leroux, M ;
Massies, J ;
Bigenwald, P ;
Christol, P .
PHYSICAL REVIEW B, 1999, 59 (15) :10246-10250