Doping screening of polarization fields in nitride heterostructures

被引：48

作者：

Di Carlo, A ^{[1
]}

Della Sala, F

Lugli, P

Fiorentini, V

Bernardini, F

机构：

[1] Univ Roma Tor Vergata, INFM, I-00133 Rome, Italy

[2] Univ Roma Tor Vergata, Dipartimento Ingn Elettron, I-00133 Rome, Italy

[3] Univ Cagliari, INFM, I-09100 Cagliari, Italy

[4] Univ Cagliari, Dipartimento Fis, I-09100 Cagliari, Italy

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 26期

关键词：

D O I：

10.1063/1.126831

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using self-consistent tight-binding calculations, we show that modulation doping can be used to screen macroscopic polarization fields in nitride quantum wells. The blue-shift of photoluminescence peak as well as the reduction of radiative recombination lifetime at increasing doping density is explained and correlated to polarization-field screening. The field-induced ionization of the dopants and its relation with alloy composition in the heterostructure barriers is also analyzed. (C) 2000 American Institute of Physics. [S0003-6951(00)05026-9].

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页码：3950 / 3952

页数：3

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