Optical properties of doped InGaN GaN multiquantum-well structures

被引：56

作者：

Dalfors, J ^{[1
]}

Bergman, JP

Holtz, PO

Sernelius, BE

Monemar, B

Amano, H

Akasaki, I

机构：

[1] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

[2] Meijo Univ, Dept Elect & Elect Engn, Tempaku Ku, Nagoya, Aichi 468, Japan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 22期

关键词：

D O I：

10.1063/1.123324

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A systematic investigation of the photoluminescence spectra from InGaN/GaN multiquantum-well structures with different levels of Si doping in the quantum well has been carried out, in order to study the screening of the strain induced piezoelectric field and potential fluctuations. It is found that the emission energy strongly depends on the carrier concentration, originating from the doping or photogeneration. The observed strong shift with Si doping can only partly be explained by the screening of the piezoelectric field. The main shift is suggested to be related to the screening of the localization potentials. (C) 1999 American Institute of Physics. [S0003-6951(99)03422-1].

引用

页码：3299 / 3301

页数：3

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