Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates

被引：344

作者：

Nakamura, S ^{[1
]}

Senoh, M ^{[1
]}

Nagahama, S ^{[1
]}

Iwasa, N ^{[1
]}

Yamada, T ^{[1
]}

Matsushita, T ^{[1
]}

Kiyoku, H ^{[1
]}

Sugimoto, Y ^{[1
]}

Kozaki, T ^{[1
]}

Umemoto, H ^{[1
]}

Sano, M ^{[1
]}

Chocho, K ^{[1
]}

机构：

[1] Nichia Chem Ind Ltd, Dept Res & Dev, Tokushima 774, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 16期

关键词：

D O I：

10.1063/1.121250

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InGaN multi-quantum-well-structure laser diodes (LDs) grown on GaN substrates were demonstrated. The LDs showed a small thermal resistance of 30 degrees C/W and a lifetime longer than 780 h despite a large threshold current density of 7 kA/cm(2). In contrast. the LDs grown on sapphire substrate exhibited a high thermal resistance of 60 degrees C/W and a short lifetime of 200 h under room-temperature continuous-wave operation. (C) 1998 American Institute of Physics.

引用

页码：2014 / 2016

页数：3

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