Excitation of a higher order transverse mode in an optically pumped In0.15Ga0.85N/In0.05Ga0.95N multiquantum well laser structure

被引：58

作者：

Hofstetter, D

Bour, DP

Thornton, RL

Johnson, NM

机构：

[1] Xerox Palo Alto Research Center, Palo Alto

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 13期

关键词：

D O I：

10.1063/1.118659

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a comparison between measured and calculated far field data for an optically pumped In0.15Ca0.85N/In0.05Ga0.95N multiquantum well laser structure with AlGaN cladding layers. Optical pumping of the semiconductor device was performed with a pulsed 337 nm N-2 laser, whose beam was focused to a narrow stripe. A thin upper cladding layer allowed efficient pumping of the In0.15Ga0.85N/In0.05Ga0.95N laser structure. Despite high distributed cavity losses of at least 30 cm(-1), and although gain occurred in the small active region only, the seventh order transverse mode was supported in a waveguide formed by the entire 5-mu m-thick epitaxial layer structure. Excellent agreement is demonstrated between measured and calculated far field patterns of the lasing mode. (C) 1997 American Institute of Physics.

引用

页码：1650 / 1652

页数：3

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