Novel pathway to the growth of diamond on cubic β-SiC(001) -: art. no. 125504

被引：4

作者：

Kong, K

Han, M

Yeom, HW

Miyamoto, Y

Sugino, O

Sasaki, T

Ohno, T

Yu, BD

机构：

[1] Univ Seoul, IQUIPS, Seoul 130743, South Korea

[2] Univ Seoul, Dept Phys, Seoul 130743, South Korea

[3] Yonsei Univ, ASSRC, Seoul 120749, South Korea

[4] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea

[5] NEC Corp Ltd, Fundamental Res Labs, Tsukuba, Ibaraki 3058501, Japan

[6] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan

来源：

PHYSICAL REVIEW LETTERS | 2002年 / 88卷 / 12期

关键词：

D O I：

10.1103/PhysRevLett.88.125504

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

By carrying out first-principles calculations on diamond-forming processes, we predict a method for the heteroepitaxial growth of diamond on cubic beta-SiC(001). In the method, we used two processes: (i) the preformation of an sp(3)-like surface configuration of beta-SiC(001) by the adsorption of group-V surfactants; (ii) the successive growth of diamond by the segregation of the surfactants onto a surface and the desorption of surface hydrogen. Analyzing the segregation energies, we found that the atomic size effect plays a crucial role in the surfactant-mediated growth of diamond on beta-SiC(001).

引用

页数：4

共 27 条

[1] LOW-PRESSURE, METASTABLE GROWTH OF DIAMOND AND DIAMONDLIKE PHASES [J].