Structural and optical properties of sulfur-annealed CuInS2 thin films

被引：36

作者：

Abaab, M

Kanzari, M

Rezig, B

Brunel, M

机构：

[1] ENIT, Lab Photovolta & Mat Semicond, Tunis 1002, Tunisia

[2] CNRS, Cristallog Lab, F-38042 Grenoble, France

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1999年 / 59卷 / 04期

关键词：

CuInS2; thin films; X-ray diffraction; vacuum thermal evaporation;

D O I：

10.1016/S0927-0248(99)00043-4

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

CuInS2 thin films were deposited by single source vacuum thermal evaporation method on substrates submitted to longitudinal thermal gradient. Some of these films were annealed in sulfur atmosphere and converted into CuInS2 homogenous layers. Both of the as-deposited and sulfurated films were characterized by X-ray diffraction, optical transmission and reflection measurements. The optical band gap of films after sulfurization was 1.50 eV which is near the optimum value for photovoltaic energy conversion. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：299 / 307

页数：9

共 18 条

[1] GROWTH AND PROCESS IDENTIFICATION OF CUINS2 ON GAP BY CHEMICAL VAPOR-DEPOSITION [J].