GROWTH AND PROCESS IDENTIFICATION OF CUINS2 ON GAP BY CHEMICAL VAPOR-DEPOSITION

[1] THE USE OF A METALORGANIC COMPOUND FOR THE GROWTH OF INP-EPITAXIAL LAYERS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (01) : 185 - 192

[2] GORYUNOVA NA, 1965, CHEM DIAMOND LIKE SE, P142

[3] GROWTH OF CUINS2 AND ITS CHARACTERIZATION [J]. REVUE DE PHYSIQUE APPLIQUEE, 1978, 13 (12): : 745 - 751

[4] GROWTH AND PROPERTIES OF CUINNS2 EPITAXIAL LAYERS OBTAINED BY CHEMICAL VAPOR TRANSPORT [J]. SOLAR ENERGY MATERIALS, 1980, 4 (01): : 67 - 79

[5] Kasper H. M, 1972, NBS SPECIAL PUBLICAT, V364, P671

[6] LOFERSKI JJ, 1974, NSFRANNSEGI38102XPR7

[7] ELECTRON AND HOLE CONDUCTIVITY IN CUINS2 [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1976, 37 (02) : 173 - 180

[8] MEESE JM, 1975, B AM PHYS SOC, V20, P696

[9] MILNES AG, 1973, HETEROJUNCTIONS META, P118

[10] TEMPERATURE DEPENDENCE OF ENERGY GAP IN GAAS AND GAP [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) : 163 - &

[1] THE USE OF A METALORGANIC COMPOUND FOR THE GROWTH OF INP-EPITAXIAL LAYERS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (01) : 185 - 192

[2] GORYUNOVA NA, 1965, CHEM DIAMOND LIKE SE, P142

[3] GROWTH OF CUINS2 AND ITS CHARACTERIZATION [J]. REVUE DE PHYSIQUE APPLIQUEE, 1978, 13 (12): : 745 - 751

[4] GROWTH AND PROPERTIES OF CUINNS2 EPITAXIAL LAYERS OBTAINED BY CHEMICAL VAPOR TRANSPORT [J]. SOLAR ENERGY MATERIALS, 1980, 4 (01): : 67 - 79

[5] Kasper H. M, 1972, NBS SPECIAL PUBLICAT, V364, P671

[6] LOFERSKI JJ, 1974, NSFRANNSEGI38102XPR7

[7] ELECTRON AND HOLE CONDUCTIVITY IN CUINS2 [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1976, 37 (02) : 173 - 180

[8] MEESE JM, 1975, B AM PHYS SOC, V20, P696

[9] MILNES AG, 1973, HETEROJUNCTIONS META, P118

[10] TEMPERATURE DEPENDENCE OF ENERGY GAP IN GAAS AND GAP [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) : 163 - &