Strong quantum confinement effects in thin zinc selenide films

被引：39

作者：

Baskoutas, S ^{[1
]}

Poulopoulos, P

Karoutsos, V

Angelakeris, M

Flevaris, NK

机构：

[1] Univ Patras, Dept Mat Sci, Patras 26504, Greece

[2] Aristotle Univ Thessaloniki, Dept Phys, Thessaloniki 54124, Greece

来源：

CHEMICAL PHYSICS LETTERS | 2006年 / 417卷 / 4-6期

关键词：

D O I：

10.1016/j.cplett.2005.10.068

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Thin Zinc Selenide films in the thickness range 3-50 nm have been prepared on high quality glass substrates by e-beam evaporation under ultrahigh vacuum conditions. Optical absorption spectroscopy experiments reveal a systematically increasing blue shift of the effective bandgap energy as the film thickness decreases, reaching a maximum value of 0.32 eV for the thinner film. The experimental results, which indicate the presence of strong quantum confinement effects, are fairly well described by theoretical calculations based on the potential morphing method, using as a confining potential the finite square well potential with height of the barriers equal to 5 eV. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：461 / 464

页数：4

共 22 条

[1]

Ashcroft N.W., 1976, Solid state physics Holt, Rinehart and Winston, Vfirst

[2] Biexciton luminescence in InAs nanorods [J].