Equilibrium states and phase transitions in epitaxial ferroelectric thin films

被引:91
作者
Pertsev, NA [1 ]
Zembilgotov, ZG
Tagantsev, AK
机构
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[2] State Tech Univ St Petersburg, St Petersburg 195251, Russia
[3] Ecole Polytech Fed Lausanne, Lab Ceram, CH-1015 Lausanne, Switzerland
关键词
ferroelectric; thin film; phase diagram; dielectric response;
D O I
10.1080/00150199908260556
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A Landau-Ginsburg-Devonshire-type thermodynamic theory is used to describe equilibrium single-domain states and phase transitions in epitaxial ferroelectric thin films. For BaTiO3 and PbTiO3 films grown on cubic substrates, the paraelectric to ferroelectric phase transition is found to be of the second order, irrespective of the lattice misfit. The temperature-misfit strain phase diagrams are developed for these films. The existence of a "monoclinic gap" separating the stability ranges of low-temperature tetragonal and orthorhombic stales is predicted. Anomalies of the dielectric response associated with the phase transitions in epitaxial films are also discussed.
引用
收藏
页码:79 / 90
页数:12
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