DEVICE PHYSICS OF FERROELECTRIC MEMORIES

被引：36

作者：

Scott, J. F. ^{[1
,2
]}

机构：

[1] Royal Melbourne Inst Technol, Fac Appl Sci, Melbourne, Vic 3001, Australia

[2] Univ New S Wales, Fac Sci, Sydney, NSW 2052, Australia

来源：

FERROELECTRICS | 1996年 / 183卷

关键词：

D O I：

10.1080/00150199608224091

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A status report is given on high-dielectric (usually ferroelectric) thin-films of fine-grained ceramics utilized for ferroelectric memories, including active memory elements in nonvolatile random access memories (NV-RAMS), passive capacitors in dynamic random access memories (DRAMS), and ferroelectric gates in ferroelectric field-effect transistors (FEMFETs) configured for non-destructive read-out (NDRO) memories. Emphasis is upon breakdown fields, leakage current, fatigue, and retention. Both the Ba(x)Sr(1-x)TiO(3) (BST) family and the SrBi(2)Ta(2)O(9) family of layer-structure perovskites are discussed. The review ends with a list of unsolved physics questions about ferroelectric thin films that will be helpful in further engineering developments.

引用

页码：51 / 63

页数：13

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