Full capacitance matrix of coupled quantum dot arrays: Static and dynamical effects

被引:23
作者
Whan, CB
White, J
Orlando, TP
机构
[1] Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.116675
中图分类号
O59 [应用物理学];
学科分类号
摘要
We numerically calculated the full capacitance matrices for both one-dimensional (1D) and two-dimensional (2D) quantum-dot arrays. We found it is necessary to use the full capacitance matrix in modeling coupled quantum dot arrays due to weaker screening in these systems in comparison with arrays of normal metal tunnel junctions. The static soliton potential distributions in both 1D and 2D arrays are well approximated by the unscreened (1/r) Coulomb potential, instead of the exponential fall-off expected from the often used nearest neighbor approximation. The Coulomb potential approximation also provides a simple expression for the full inverse capacitance matrix of uniform quantum dot arrays. In terms of dynamics, we compare the current-voltage (I-V) characteristics of voltage biased 1D arrays using either the full capacitance matrix or its nearest neighbor approximation. The I-V curves show clear differences and the differences become more pronounced when larger arrays are considered. (C) 1996 American Institute of Physics.
引用
收藏
页码:2996 / 2998
页数:3
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