Diffusion barrier performances of direct current sputter-deposited Mo and MoxN films between Cu and Si

被引：35

作者：

He, Y ^{[1
]}

Feng, JY ^{[1
]}

机构：

[1] Tsing Hua Univ, Key Lab Adv Mat, Dept Mat Sci & Engn, Beijing 100084, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2004年 / 263卷 / 1-4期

基金：

中国国家自然科学基金;

关键词：

crystal structure; x-ray diffraction; nitrides;

D O I：

10.1016/j.jcrysgro.2003.11.005

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this work, we have investigated the diffusion barrier performance of Mo and MoxN films deposited by direct current sputtering between the Cu and Si substrates. theta-2theta X-ray diffraction patterns showed the temperature of the Cu3Si phase formed in three different structures. The results of scanning electron microscopy indicated the morphological evolution of the sample surfaces after annealing at different temperatures. Four-probe measurements showed that the MoxN barrier was better at maintaining the good electrical performance of the Cu metallization system than the Mo barrier. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：203 / 207

页数：5

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